Promecon™ Principles of Operation

Sources of metal ions in front-end processes include process hardware (SiC paddles, boats, and tube), diffusion through quartz tubes, and unintended contamination of the wafers from etch, resist strip, ion implantation, or other process steps. In conventional processing these contaminants transport through the process ambient by diffusion, resulting in contamination of the wafers in process.

 

Promecon technology imposes an electric field between the wafers and the ambient, by applying a voltage between the wafer boat and the process tube.

The electric field is concentrated in the region between the wafer edges and the tube or liner, with negligible electric fields at the sensitive surface of the wafers. Positive ions formed by electron transfer at surfaces are driven away from the wafer by the electric field, and must be replaced by slow diffusion of neutrals, causing the concentration of metals near the wafers to fall.

Promecon diagram, simulated region
Simulated electrostatic potential

 

Promecon protection is particularly effective with alkali metals, which are volatile and easily ionized; the electric field is also useful in reducing iron and copper contamination. Promecon can be used to reduce or eliminate the need for chlorine-based cleaning, reducing materials costs, increasing uptime, and decreasing equipment corrosion. Operation of Promecon™ during oxidation can be employed with no degradation of oxide quality.